Dual Color AlInGaP SMD LED Datasheet - Package Dimensions - Green 2.0V / Orange 2.0V - 75mW Power - English Technical Document

1. Product Overview

This document details the technical specifications for a high-brightness, dual-color Surface Mount Device (SMD) Light Emitting Diode (LED). The device incorporates two distinct AlInGaP (Aluminum Indium Gallium Phosphide) semiconductor chips within a single package, enabling the emission of green and orange light. It is designed for compatibility with automated assembly processes and modern soldering techniques, making it suitable for high-volume electronic manufacturing.

The core advantages of this product include its compliance with environmental regulations (RoHS), utilization of advanced AlInGaP technology for superior brightness, and a standardized package format that ensures broad compatibility with industry placement and soldering equipment. Its primary target markets include consumer electronics, industrial indicators, automotive interior lighting, and various signaling applications where reliable, dual-color indication is required.

2. Technical Parameter Deep Dive

2.1 Absolute Maximum Ratings

These ratings define the stress limits beyond which permanent damage to the device may occur. Operation under or at these limits is not guaranteed.

• Power Dissipation (P_d): 75 mW per color chip at an ambient temperature (T_a) of 25°C. Exceeding this value risks thermal overstress.
• Forward Current: The maximum continuous DC forward current (I_F) is 30 mA. A higher peak forward current of 80 mA is permissible only under pulsed conditions (1/10 duty cycle, 0.1ms pulse width) to prevent overheating.
• Current Derating: The maximum allowable DC forward current decreases linearly at a rate of 0.4 mA/°C as the ambient temperature rises above 25°C. This is a critical design consideration for high-temperature environments.
• Reverse Voltage (V_R): 5 V. Applying a reverse bias voltage higher than this can cause junction breakdown.
• Temperature Ranges: The device can operate and be stored within a wide temperature range of -55°C to +85°C.
• Soldering Tolerance: The LED can withstand wave or infrared soldering at 260°C for 5 seconds, or vapor phase soldering at 215°C for 3 minutes, confirming its robustness for standard SMT reflow processes.

2.2 Electrical & Optical Characteristics

These parameters are measured under standard test conditions (T_a=25°C, I_F=20 mA) and define the device's performance.

• Luminous Intensity (I_V): A key measure of brightness. The green chip has a typical intensity of 35.0 mcd (min. 18.0 mcd), while the orange chip is significantly brighter with a typical intensity of 90.0 mcd (min. 28.0 mcd). Intensity is measured using a sensor filtered to match the human eye's photopic response (CIE curve).
• Viewing Angle (2θ_1/2): Approximately 130 degrees for both colors. This wide viewing angle indicates a diffuse radiation pattern, suitable for applications requiring visibility from a broad range of angles.
• Wavelength: The green chip's typical dominant wavelength (λ_d) is 571 nm, with a peak emission wavelength (λ_p) at 574 nm. The orange chip emits at a typical λ_d of 605 nm and λ_p of 611 nm. The spectral half-width (Δλ) is approximately 15 nm for green and 17 nm for orange, defining the color purity.
• Forward Voltage (V_F): Typically 2.0 V for both colors at 20 mA, with a maximum of 2.4 V. This low voltage is compatible with common logic-level power supplies.
• Reverse Current (I_R): Maximum 10 μA at 5 V reverse bias, indicating good junction quality.
• Capacitance (C): Typically 40 pF at 0V bias and 1 MHz. This is relevant for high-frequency switching applications.

3. Binning System Explanation

The LEDs are sorted into bins based on luminous intensity and dominant wavelength to ensure consistency in production runs. Designers can specify bins to achieve uniform appearance in their products.

3.1 Luminous Intensity Binning

For the Green chip, bins range from M (18.0-28.0 mcd) to Q (71.0-112.0 mcd). For the Orange chip, bins range from N (28.0-45.0 mcd) to R (112.0-180.0 mcd). A tolerance of ±15% applies within each bin.

3.2 Dominant Wavelength Binning (Green Only)

The green LEDs are further binned by dominant wavelength: Bin C (567.5-570.5 nm), Bin D (570.5-573.5 nm), and Bin E (573.5-576.5 nm), with a ±1 nm tolerance per bin. This allows for precise color matching in critical applications.

4. Performance Curve Analysis

While specific graphs are referenced in the datasheet (Fig.1, Fig.6), typical curves for such devices would illustrate the following relationships:

• I-V Curve: Shows the exponential relationship between forward voltage and current. The curve will have a distinct knee around the typical V_F of 2.0V.
• Luminous Intensity vs. Forward Current: Intensity generally increases linearly with current in the normal operating range (up to the rated DC current).
• Luminous Intensity vs. Ambient Temperature: Intensity typically decreases as temperature increases due to reduced internal quantum efficiency. The derating factor of 0.4 mA/°C is used to compensate for this effect electrically.
• Spectral Distribution: A plot of relative radiant power versus wavelength, showing a single peak at λ_p (574nm for green, 611nm for orange) with the specified half-width.

5. Mechanical & Packaging Information

5.1 Package Dimensions and Polarity

The device conforms to an EIA standard SMD package outline. The pin assignment is clearly defined: Pins 1 and 3 are for the green chip, while pins 2 and 4 are for the orange chip. The lens is water clear. All dimensional tolerances are ±0.10 mm unless otherwise specified.

5.2 Recommended Solder Pad Design

A land pattern recommendation is provided to ensure reliable solder joint formation, proper alignment, and sufficient mechanical strength during and after the reflow process. Adhering to this pattern is crucial for manufacturing yield.

6. Soldering & Assembly Guide

6.1 Reflow Soldering Profiles

Detailed suggested profiles are provided for both standard (SnPb) and lead-free (SnAgCu) solder processes using Infrared (IR) reflow. Key parameters include pre-heat zones, time above liquidus, peak temperature (max 240°C recommended), and cooling rates. These profiles are essential to prevent thermal shock and ensure reliable solder connections without damaging the LED package.

6.2 Storage and Handling

• Storage: LEDs should be stored in conditions not exceeding 30°C and 70% relative humidity. Components removed from their moisture-barrier packaging should be reflowed within one week or baked before use if stored longer.
• Cleaning: If necessary, cleaning should be done only with specified solvents like ethyl alcohol or isopropyl alcohol at room temperature for less than one minute. Unspecified chemicals may damage the epoxy lens.
• ESD Precautions: The device is sensitive to electrostatic discharge. Handling procedures include using grounded wrist straps, anti-static mats, and ensuring all equipment is properly grounded.

7. Packaging & Ordering Information

The LEDs are supplied in industry-standard 8mm tape on 7-inch diameter reels. Each reel contains 3000 pieces. The tape-and-reel specifications comply with ANSI/EIA 481-1-A-1994. Key packaging notes include: empty pockets are sealed, a minimum order quantity for remainders is 500 pieces, and a maximum of two consecutive missing components are allowed per reel.

8. Application Recommendations

8.1 Typical Application Scenarios

This dual-color LED is ideal for status indicators, backlighting for buttons or icons, automotive dashboard lighting, consumer appliance displays, and industrial control panel signals where two distinct states (e.g., power on/standby, active/alarm) need to be indicated by color.

8.2 Circuit Design Considerations

Drive Method: LEDs are current-driven devices. To ensure uniform brightness when driving multiple LEDs in parallel, it is strongly recommended to use a separate current-limiting resistor in series with each LED (Circuit Model A). Driving LEDs in parallel without individual resistors (Circuit Model B) is discouraged, as small variations in the forward voltage (V_F) characteristic between individual LEDs can lead to significant current imbalance and uneven brightness.

The series resistor value (R_s) can be calculated using Ohm's Law: R_s = (V_supply - V_F) / I_F, where I_F is the desired operating current (e.g., 20 mA).

9. Technical Comparison & Differentiation

The key differentiating factors of this LED are its dual-color capability in a single compact SMD package and the use of AlInGaP technology. Compared to older technologies like standard GaP, AlInGaP offers significantly higher luminous efficiency, resulting in greater brightness for the same input current. The integration of two chips saves board space and simplifies assembly compared to using two separate single-color LEDs.

10. Frequently Asked Questions (Based on Technical Parameters)

Q: Can I drive both the green and orange chips simultaneously at their maximum DC current (30mA each)?
A: No. The absolute maximum power dissipation is 75 mW per chip. At 30 mA and a typical V_F of 2.0V, the power per chip is 60 mW, which is within limits. However, driving both simultaneously at full power generates 120 mW of total heat in a very small package, which likely exceeds the overall thermal dissipation capability of the device and the PCB. Consult thermal derating curves and consider lower drive currents or pulsed operation for both colors simultaneously.

Q: Why is a separate current-limiting resistor needed for each LED in parallel?
A: The forward voltage (V_F) of LEDs has a natural variation, even within the same bin. In a parallel connection without individual resistors, the LED with the slightly lower V_F will draw disproportionately more current, becoming brighter and hotter, potentially leading to failure and shifting more current to the remaining LEDs in a cascading effect. Series resistors ensure current is set primarily by the resistor value and supply voltage, making the system much more stable and reliable.

Q: What does \"water clear\" lens mean for the color appearance?
A: A water clear (non-diffused) lens does not scatter the light internally. This results in a more focused, \"hot-spot\" appearance when viewed directly on-axis, with the chip structure often visible. It maximizes the axial luminous intensity but provides a narrower \"sweet spot\" for viewing compared to a diffused (milky) lens which scatters light for a wider, more uniform viewing angle with less visible chip structure.

11. Practical Design Case Study

Scenario: Designing a dual-status indicator for a portable device. Green indicates \"Fully Charged,\" and orange indicates \"Charging.\" The device is powered by a 3.3V rail.

Design Steps:
1. Current Selection: Choose a drive current. For good visibility and longevity, 15 mA is selected, well below the 30 mA maximum.
2. Resistor Calculation:
- For Green: R_{s_green} = (3.3V - 2.0V) / 0.015 A = 86.7 Ω. Use a standard 86.6 Ω (1%) or 91 Ω (5%) resistor.
- For Orange: R_{s_orange} = (3.3V - 2.0V) / 0.015 A = 86.7 Ω. Use the same value.
3. Circuit: Connect the green anode (pin 1 or 3) to the 3.3V rail via a transistor/MOSFET controlled by the \"charged\" logic signal, with the 87Ω resistor in series. Connect the orange anode (pin 2 or 4) similarly, controlled by the \"charging\" signal. Connect all cathodes to ground.
4. Layout: Follow the recommended solder pad layout. Ensure the PCB has sufficient copper area around the LED pads to act as a heat sink, especially if both LEDs might be on briefly during state transitions.

12. Technology Principle Introduction

AlInGaP is a III-V semiconductor compound used in the active region of high-brightness LEDs emitting in the red, orange, yellow, and green spectrum. By adjusting the ratios of Aluminum, Indium, Gallium, and Phosphorus, the bandgap of the material can be precisely engineered, which directly determines the wavelength (color) of the emitted light. When a forward voltage is applied across the p-n junction, electrons and holes recombine, releasing energy in the form of photons. The efficiency of this radiative recombination in AlInGaP is very high, leading to superior luminous efficacy compared to older technologies. The dual-color package houses two such independently addressable semiconductor chips mounted on a lead frame and encapsulated in a clear epoxy lens.

13. Industry Trends & Developments

The optoelectronics industry continues to push for higher efficiency (more lumens per watt), improved color rendering, and greater miniaturization. While AlInGaP dominates the long-wavelength visible spectrum, InGaN (Indium Gallium Nitride) technology is prevalent for blue, green, and white LEDs. Trends relevant to this product include the increasing adoption of lead-free soldering processes (addressed by the provided profile), the demand for smaller package footprints with maintained or increased optical power, and the integration of more complex functionality (like built-in ICs for addressable RGB LEDs) into LED packages. The emphasis on reliability and standardized testing for automotive and industrial applications also drives stricter binning and qualification procedures for components like this dual-color LED.