SMD Blue LED Datasheet - 0.8mm Height - 3.8V Max - 76mW Power - Water Clear Lens - English Technical Document

1. Product Overview

This document details the specifications for an ultra-thin, surface-mount blue LED component. The device is designed for modern, compact electronic assemblies requiring a low-profile light source. Its primary application is in backlighting, status indicators, and decorative lighting within consumer electronics, office equipment, and communication devices.

The core advantages of this component include its exceptionally thin profile of 0.80mm, which allows for integration into space-constrained designs. It utilizes an InGaN (Indium Gallium Nitride) dice chip, known for producing high-brightness blue light. The product is compliant with RoHS (Restriction of Hazardous Substances) directives, classifying it as a green product. It is packaged on 8mm tape wound onto 7-inch diameter reels, making it fully compatible with high-speed automated pick-and-place assembly equipment used in volume manufacturing.

2. Technical Parameters Deep Objective Interpretation

2.1 Absolute Maximum Ratings

The device's operational limits are defined at an ambient temperature (Ta) of 25°C. Exceeding these ratings may cause permanent damage.

• Power Dissipation (Pd): 76 mW. This is the maximum amount of power the LED package can dissipate as heat without degrading performance or reliability.
• Peak Forward Current (I_FP): 100 mA. This is the maximum instantaneous current allowed under pulsed conditions, specified at a 1/10 duty cycle and 0.1ms pulse width. It is significantly higher than the continuous current rating.
• DC Forward Current (I_F): 20 mA. This is the recommended maximum continuous forward current for normal operation, ensuring long-term reliability and stable light output.
• Operating Temperature Range: -20°C to +80°C. The device is guaranteed to function within this ambient temperature range.
• Storage Temperature Range: -30°C to +100°C. The device can be stored without applied power within this wider temperature range.
• Infrared Soldering Condition: 260°C for 10 seconds. This defines the peak temperature and time tolerance for lead-free (Pb-free) reflow soldering processes.

2.2 Electrical & Optical Characteristics

These parameters are measured at Ta=25°C and define the typical performance of the device.

• Luminous Intensity (I_V): 28.0 - 180.0 mcd (millicandela) at I_F=20mA. This wide range indicates the device is available in different brightness bins (see Section 3). Measurement is performed with a sensor/filter approximating the CIE photopic eye-response curve.
• Viewing Angle (2θ_1/2): 130 degrees. This is the full angle at which the luminous intensity drops to half of its value at the central axis (0°). A wide viewing angle is typical for a water-clear lens without a diffusing dome.
• Peak Emission Wavelength (λ_P): 468 nm. This is the wavelength at which the spectral power output is maximum.
• Dominant Wavelength (λ_d): 465.0 - 475.0 nm at I_F=20mA. This is the single wavelength perceived by the human eye that defines the color of the light, derived from the CIE chromaticity diagram.
• Spectral Line Half-Width (Δλ): 25 nm. This indicates the spectral purity; a smaller value means a more monochromatic light. 25nm is typical for a blue InGaN LED.
• Forward Voltage (V_F): 2.8 - 3.8 V at I_F=20mA. The voltage drop across the LED when operating. This range corresponds to different forward voltage bins.
• Reverse Current (I_R): 10 μA (max) at V_R=5V. The small leakage current when a reverse bias is applied. Important: The device is not designed for reverse operation; this test condition is for characterization only.

3. Binning System Explanation

To ensure consistency in production runs, LEDs are sorted into bins based on key parameters. This allows designers to select components that meet specific application requirements for color and electrical performance.

3.1 Forward Voltage Binning

Units: Volts (V) @ 20mA. Tolerance on each bin is ±0.1V.
Bin D7: 2.80 - 3.00V
Bin D8: 3.00 - 3.20V
Bin D9: 3.20 - 3.40V
Bin D10: 3.40 - 3.60V
Bin D11: 3.60 - 3.80V

3.2 Luminous Intensity Binning

Units: millicandela (mcd) @ 20mA. Tolerance on each bin is ±15%.
Bin N: 28.0 - 45.0 mcd
Bin P: 45.0 - 71.0 mcd
Bin Q: 71.0 - 112.0 mcd
Bin R: 112.0 - 180.0 mcd

3.3 Dominant Wavelength Binning

Units: nanometers (nm) @ 20mA. Tolerance for each bin is ±1nm.
Bin AC: 465.0 - 470.0 nm (slightly greener blue)
Bin AD: 470.0 - 475.0 nm (slightly purer blue)

4. Performance Curve Analysis

While specific graphical curves are referenced in the datasheet (e.g., Fig.1, Fig.6), their typical behavior can be described based on the technology.

4.1 Forward Current vs. Forward Voltage (I-V Curve)

The InGaN semiconductor has a characteristic turn-on voltage around 2.8V. Above this threshold, the current increases exponentially with a small increase in voltage. The curve will show a sharp knee, typical of diode behavior. Operating at the recommended 20mA ensures the device is well past the knee point for stable light emission.

4.2 Luminous Intensity vs. Forward Current (L-I Curve)

The light output (luminous intensity) is approximately proportional to the forward current up to a point. However, efficiency may drop at very high currents due to increased heat generation within the chip (droop effect). The 20mA rating is chosen to balance brightness with efficiency and longevity.

4.3 Temperature Characteristics

LED performance is temperature-dependent. Typically, as the junction temperature increases:
- The forward voltage (V_F) decreases slightly.
- The luminous intensity decreases. The exact derating factor is application-specific but must be considered for designs operating at high ambient temperatures or with high drive currents.
- The dominant wavelength may shift slightly (usually towards longer wavelengths for blue LEDs).

4.4 Spectral Distribution

The emission spectrum is a Gaussian-like curve centered around the peak wavelength (468 nm) with a half-width of 25 nm. The water-clear lens does not significantly alter this spectrum, unlike lenses with phosphor coatings used in white LEDs.

5. Mechanical & Packaging Information

5.1 Package Dimensions

The device conforms to an EIA (Electronic Industries Alliance) standard package outline. Key dimensions include a total height (H) of 0.80mm, making it an \"extra thin\" component. Other critical dimensions for PCB footprint design are provided in the datasheet drawings, with a general tolerance of ±0.10mm unless otherwise specified.

5.2 Polarity Identification

Like all diodes, the LED has an anode (positive) and cathode (negative) terminal. The package typically uses a visual marker, such as a notch, a dot, or a chamfered corner on the cathode side. The suggested soldering pad layout in the datasheet will indicate the correct orientation for PCB design.

5.3 Tape and Reel Specifications

The component is supplied in embossed carrier tape with a protective cover tape, wound onto 7-inch (178mm) diameter reels. Standard reel quantity is 3000 pieces. Packaging follows ANSI/EIA-481 specifications. Key notes include: empty pockets are sealed, a minimum packing quantity of 500 pieces for remainders, and a maximum of two consecutive missing components allowed per reel.

6. Soldering & Assembly Guidelines

6.1 Reflow Soldering Profile

The device is compatible with infrared (IR) reflow soldering processes, essential for Pb-free assembly. A suggested profile is provided, adhering to JEDEC standards. Key parameters include:
- Pre-heat: 150–200°C
- Pre-heat Time: Maximum 120 seconds to allow for uniform heating and solvent evaporation.
- Peak Temperature: Maximum 260°C.
- Time Above Liquidus (TAL): The suggested profile shows a specific time within the critical reflow zone; the datasheet specifies a maximum of 10 seconds at peak temperature.
- Number of Passes: Maximum of two reflow cycles.

6.2 Hand Soldering

If hand soldering is necessary, use a temperature-controlled iron.
- Iron Temperature: Maximum 300°C.
- Soldering Time: Maximum 3 seconds per pad.
- Number of Passes: One time only. Excessive heat can damage the plastic package and the semiconductor die.

6.3 Storage Conditions

Moisture sensitivity is a critical factor for SMD components.
- Sealed Package: Store at ≤30°C and ≤90% Relative Humidity (RH). Use within one year of the bag seal date when packed with desiccant.
- Opened Package: For components removed from the moisture barrier bag, the storage ambient should not exceed 30°C / 60% RH. It is recommended to complete IR reflow within one week of opening.
- Extended Storage (Opened): Store in a sealed container with desiccant or in a nitrogen desiccator.
- Baking: If components have been exposed to ambient conditions for more than one week, bake at approximately 60°C for at least 20 hours before soldering to remove absorbed moisture and prevent \"popcorning\" during reflow.

6.4 Cleaning

Do not use unspecified chemical cleaners. If cleaning is required after soldering, immerse the LED in ethyl alcohol or isopropyl alcohol at normal temperature for less than one minute. Aggressive solvents can damage the plastic lens and package.

7. Application Suggestions

7.1 Typical Application Scenarios

• Backlighting: Keypads, small LCD displays, icon illumination.
• Status Indicators: Power-on, standby, connectivity, battery charge status in portable devices, routers, and appliances.
• Decorative Lighting: Accent lighting in consumer electronics.
• Panel Indicators: Equipment front panels.

7.2 Design Considerations

• Current Limiting: Always use a series current-limiting resistor or a constant-current driver. Calculate the resistor value using R = (V_supply - V_F) / I_F. Use the maximum V_F from the bin or datasheet to ensure current does not exceed 20mA under worst-case conditions.
• ESD Protection: LEDs are sensitive to electrostatic discharge (ESD). Handle with appropriate ESD precautions (wrist straps, grounded workstations). Incorporate ESD protection diodes on PCBs if the LED is in an exposed location.
• Thermal Management: Although power dissipation is low, ensure adequate PCB copper area or thermal vias under the LED pads to conduct heat away, especially in high ambient temperature environments or when driven near maximum current.
• Optical Design: The 130° viewing angle provides wide coverage. For directed light, external lenses or light guides may be necessary.

8. Technical Comparison & Differentiation

Compared to older through-hole LEDs or larger SMD packages (e.g., 0603, 0805), this device's primary differentiator is its 0.8mm height, enabling thinner end products. Compared to other \"chip\" LEDs, the use of InGaN technology provides higher brightness and efficiency for blue light emission than older technologies. The combination of thin profile, high brightness, and compatibility with automated, high-temperature Pb-free assembly makes it suitable for modern, cost-effective, and reliable mass production.

9. Frequently Asked Questions (Based on Technical Parameters)

Q: Can I drive this LED with 3.3V without a resistor?
A: No. The forward voltage ranges from 2.8V to 3.8V. Connecting 3.3V directly could result in excessive current if the LED's V_F is at the low end of the range (e.g., 2.9V), potentially damaging it. Always use a current-limiting mechanism.

Q: What is the difference between Peak Wavelength and Dominant Wavelength?
A: Peak Wavelength (λ_P) is the physical peak of the light spectrum (468 nm). Dominant Wavelength (λ_d) is the single wavelength the human eye perceives as the color (465-475 nm), calculated from color coordinates. For monochromatic LEDs like this blue one, they are close but not identical.

Q: Why is the storage humidity requirement stricter for opened packages?
A> Plastic SMD packages absorb moisture from the air. During the high heat of reflow soldering, this trapped moisture can vaporize rapidly, creating internal pressure that can crack the package (\"popcorning\" or \"delamination\"). The stricter limits and baking procedures prevent this failure mode.

Q: Can I use this for reverse voltage indication?
A: No. The datasheet explicitly states the device is not designed for reverse operation. The 5V reverse current test is for characterization only. Applying a continuous reverse bias will likely damage the LED.

10. Practical Design Case

Scenario: Designing a status indicator for a USB-powered device (5V supply).
Step 1 - Component Selection: Choose a brightness bin (e.g., Bin P for medium brightness) and a forward voltage bin (e.g., Bin D9 for design calculation).
Step 2 - Circuit Design: Calculate the series resistor. Using max V_F from Bin D9 (3.4V) and target I_F of 20mA: R = (5V - 3.4V) / 0.020A = 80 Ohms. Select the nearest standard value (82 Ohms). Re-calculate actual current: I_F = (5V - 3.2V*) / 82Ω ≈ 21.95mA (safe). *Using typical V_F.
Step 3 - PCB Layout: Place the 82Ω resistor in series with the LED anode. Follow the suggested soldering pad dimensions from the datasheet. Include a small thermal relief or extra copper pour for heat dissipation.
Step 4 - Assembly: Follow the recommended reflow profile. Store opened reels in a dry cabinet if not used immediately.

11. Principle Introduction

This LED is based on a semiconductor heterostructure made of Indium Gallium Nitride (InGaN). When a forward voltage is applied, electrons and holes are injected into the active region of the semiconductor. They recombine, releasing energy in the form of photons (light). The specific composition of the InGaN alloy determines the bandgap energy, which in turn dictates the wavelength (color) of the emitted light—in this case, blue. The water-clear epoxy lens encapsulates and protects the semiconductor die while also shaping the light output beam.

12. Development Trends

The trend in SMD LEDs for indicator applications continues towards smaller footprints, lower profiles, and higher brightness efficiency (more light output per unit of electrical power). There is also a strong drive for improved reliability under higher temperature soldering processes to accommodate lead-free mandates. Integration with onboard drivers or smarter packaging for simplified assembly may also be areas of development. The underlying InGaN material technology continues to mature, offering better performance and stability.